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R01UH0336EJ0102 Rev.1.02
Page 1535 of 1538
Jul 17, 2014
V850E2/PG4-L
Section 27 Electrical Characteristics
27.6.17
Flash Memory Programming Characteristics
(a)
Basic Characteristics
(T
a
= -40 to +125°C, V
DD
= EV
DD
= OSCV
DD
= 3.0 to 5.5 V,
AV
DD0
= 4.2 to 5.5 V, V
SS
= EV
SS
= OSCV
SS
= AV
SS0
= 0 V)
Note 1.
In writing to a delivered product, either "erasing
→
writing" or "writing alone" is
considered as a "time" of rewriting.
Example: (P: writing, E: erasing)
Delivered product
→
P
→
E
→
P
→
E
→
P: 3 times
Delivered product
→
E
→
P
→
E
→
P
→
E
→
P: 3 times
Note 2.
Storage temperature: Ta = Tj = 95°C
Item
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Operating frequency
f
CPU
80
MHz
Number of times rewritable
(per block)
*
1
C
ERWR
Code Flash
Data are retained
for 20 years
1000
Times/
block
Data Flash
Data are retained
for 20 years
*
2
100000
Times/
block