
R01UH0336EJ0102 Rev.1.02
Page 1496 of 1538
Jul 17, 2014
V850E2/PG4-L
Section 27 Electrical Characteristics
27.4 Characteristics of Oscillation Circuit
27.4.1
Characteristics of Oscillation Circuit
(T
a
= -40 to +125°C, V
DD
= EV
DD
= OSCV
DD
= 3.0 to 5.5 V,
AV
DD0
= 4.2 to 5.5 V, V
SS
= EV
SS
= OSCV
SS
= AV
SS0
= 0 V)
Caution 1.
The figure below shows the characteristics of oscillation circuit only.
When placing wiring in the area enclosed by the broken line in the figure below
during the design of the oscillator, avoid adverse effects from wiring
capacitance by following the directions below.
• Bring the oscillation circuit as close as possible to the X1 and X2
terminals.
• Do not pass other signal conductors through the broken line part in the
above figure.
• Do not route the wiring near signal lines through which a high fluctuating
current flows.
• Always make the ground point of the oscillator capacitor the same
potential as OSCV
SS
.
• Do not ground the capacitor to a ground pattern through which a high
current flows.
• Do not fetch signals from the oscillator.
Caution 2.
When selecting the crystal oscillator, designing the parameters of the
oscillation circuit, or calculating the time required for oscillation to become
stable, exhaustively evaluate the finished system for matching of the device
and the oscillator or ask the manufacturer of the oscillator to do so.
Item
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Oscillation frequency
fx
μ
PD70F4155
8
8
8
MHz
μ
PD70F4154
16
16
16
MHz
X 1 X 2
R d