DDR memory controller (MPMC)
RM0082
108/844
Doc ID 018672 Rev 1
10.3 Features
overview
The memory controller includes the following main features:
●
Multi channel AHB interfaces:
–
Five independent AHB ports.
–
Separate AHB memory controller programming interface.
–
Support all AHB burst types.
–
Lock transaction are not supported.
–
Port queue post multiple AHB transactions.
●
Internal efficient port arbitration scheme to ensure high memory bandwidth utilization.
●
Fully pipelined read - write commands.
●
Advanced bank look-ahead features for high memory throughput.
●
Programmable register interface to control memory device parameters and protocols
including the following main functionalities:
–
Auto pre-charge.
–
Read/write grouping.
–
Bank splitting.
–
Bank grouping.
–
Swapping.
–
Aging.
●
Full initialization of memory on memory controller reset.
●
DRAM controller supports both DDR-Mobile and DDR2 memory devices:
–
DDR- Mobile up to 166 MHz (333 MT/sec).
–
DDR2 up to 333 MHz (666 MT/sec).
●
Memory frequency with DLL enable configured within range from 100 MHz to 333 MHz.
●
Controller supports:
–
Wide range of memory device: 128 MBit, 256 MBit, 512 MBit, 1 MBit, 2 MBit.
–
Two chip selects.
–
Memory data with 8 or 16 bit.
–
Configurable memory parameters:
–
Row address from 8 to 15 bit.
–
Column address from 7 to 14 bit.
–
Memory internal banks 4 or 8.
●
Programmable DQS0/1 signals per byte configurable single ended and differential
mode.
●
Built-in adjustable delay compensation circuitry (DCC) for reliable data sends and
captures timing.
●
Dynamic memory self refresh power reduction automatically activated from SoC power
management unit.