Rev. 5.00, 12/03, page 730 of 1088
(3) Do not take the chip out of the PROM programmer or reset the chip during programming or
erasure. Flash memory is susceptible to permanent damage since a high voltage is being
applied during the programming/erasing. When the reset signal is accidentally input to the
chip, the period in the reset state until the reset signal is released should be longer than the
normal 100
µ
s.
(4) The flash memory is initially in the erased state when the device is shipped by Renesas
Technology. For other chips for which the history of erasure is unknown, auto-erasing as a
check and supplement for the initialization (erase) level is recommended.
(5) This LSI does not support modes such as the product identification mode of general purpose
EPROM. Therefore, the device name is not automatically set in the PROM programmer.
(6) For further information on the writer programmer and its software version, please refer to the
instruction manual for the socket adapter.
Summary of Contents for H8S/2318 series
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Page 901: ...Rev 5 00 12 03 page 871 of 1088 A 2 Instruction Codes Table A 2 shows the instruction codes...
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