Renesas H8S/2318 series, Hardware Manual

Page: 787 / 1121

Rev. 5.00, 12/03, page 757 of 1088
17.29.2 AC Characteristics and Timing in PROM Mode
Table 17-65 AC Characteristics in Memory Read Mode
Condition: V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V, T
a
= 25˚C ± 5˚C
Code Symbol Min Max Unit
Command write cycle t
nxtc
20 —
µ
s
CE
hold time t
ceh
0 — ns
CE
setup time t
ces
0 — ns
Data hold time t
dh
50 — ns
Data setup time t
ds
50 — ns
Programming pulse width t
wep
70 — ns
WE
rise time t
r
— 30 ns
WE
fall time t
f
— 30 ns
CE
A18-0
I/O7-0
OE
WE
Command write
t
ceh
t
ds
t
dh
tf tr
t
nxtc
Note : Data is latched at the rising edge of
WE
.
t
ces
t
wep
Memory read mode
Address stable
Figure 17-88 Memory Read Timing after Command Write