Rev. 5.00, 12/03, page 557 of 1088
17.4
Overview of Flash Memory (H8S/2318 F-ZTAT, H8S/2317 F-ZTAT,
H8S/2315 F-ZTAT, H8S/2314 F-ZTAT)
17.4.1
Features
The H8S/2318 F-ZTAT, H8S/2317 F-ZTAT, H8S/2315 F-ZTAT, and H8S/2314 F-ZTAT have
384, 256, 128 kbytes of on-chip flash memory. The features of the flash memory are summarized
below.
•
Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
•
Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erasing is performed by block erase (in
single-block units). To erase the entire flash memory, the individual blocks must be erased
sequentially. Block erasing can be performed as required on 4-kbyte, 32-kbyte, and 64-kbyte
blocks.
•
Programming/erase times
The flash memory programming time is 10.0 ms (typ.) for simultaneous 128-byte
programming, equivalent to 78
µ
s (typ.) per byte, and the erase time is 50 ms (typ.).
•
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
•
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
•
Automatic bit rate adjustment
With data transfer in boot mode, the bit rate of the chip can be automatically adjusted to match
the transfer bit rate of the host.
•
Flash memory emulation by RAM*
Part of the RAM area can be overlapped onto flash memory, to emulate flash memory updates
in real time.
•
Protect modes
There are three protect modes, hardware, software, and error protect, which allow protected
status to be designated for flash memory program/erase/verify operations.
Summary of Contents for H8S/2318 series
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