Renesas H8S/2318 series, Hardware Manual

Page: 672 / 1121

Rev. 5.00, 12/03, page 642 of 1088
End of erasing
Start
Set SWE1 (2) bit in FLMCR1 (2)
Set ESU1 (2) bit in FLMCR1 (2)
Set E1 (2) bit in FLMCR1 (2)
Wait (x)
µ
s
Wait (y)
µ
s
n = 1
Set EBR1, EBR2
Enable WDT
*
2
*
2
*
4
Wait (z) ms *
2
Wait (
α
)
µ
s
*
2
Wait (
β
)
µ
s
*
2
Wait (
γ
)
µ
s
Set block start address to verify address
*
2
Wait (
ε
)
µ
s
*
2
*
3
*
2
Wait (
η
)
µ
s
*
2
*
2
*
5
Start of erase
Clear E1 (2) bit in FLMCR1(2)
Clear ESU1 (2) bit in FLMCR1 (2)
Set EV1 (2) bit in FLMCR1 (2)
H'FF dummy write to verify address
Read verify data
Clear EV1 (2) bit in FLMCR1 (2)
Wait (
η
)
µ
s
Clear EV1 (2) bit in FLMCR1 (2)
Clear SWE1 (2) bit in FLMCR1 (2)
Disable WDT
Halt erase
*
1
Verify data = all 1?
Last address of block?
End of
erasing of all erase
blocks?
Erase failure
Clear SWE1 (2) bit in FLMCR1 (2)
n
≥
N?
NG
NG
NG NG
OK
OK
OK
OK
n
←
n + 1
Increment
address
Notes: 1. Prewriting (setting erase block data to all 0) is not necessary.
2. The values of x, y, z,
α
,
β
,
γ
,
ε
,
η
,
θ
, and N are shown in section 20.3.6, Flash Memory Characteristics.
3. Verify data is read in 16-bit (W) units.
4. Set only one bit in EBR1or EBR2. More than one bit cannot be set.
5. Erasing is performed in block units. To erase a number of blocks, the individual blocks must be erased sequentially.
Wait (
θ
)
µ
s Wait (
θ
)
µ
s
Figure 17-46 Erase/Erase-Verify Flowchart