EMIF_nCS[0]
EMIF_nCAS
EMIF_nRAS
EMIF_nWE
EMIF_CLK
EMIF_CKE
EMIF_BA[1:0]
EMIF_A[11:0]
EMIF_nDQM[0]
EMIF_nDQM[1]
EMIF_D[15:0]
EMIF
nCE
nCAS
nRAS
nWE
CLK
CKE
BA[1:0]
A[11:0]
LDQM
UDQM
DQ[15:0]
SDRAM
2M x 16
x 4 bank
PRE
EMIF_CLK
EMIF_nCS[0]
EMIF_BA
EMIF_A
EMIF_nRAS
EMIF_nCAS
EMIF_nWE
Bank
EMIF_A[10]=0
EMIF_nDQM
EMIF Module Architecture
621
SPNU503C – March 2018
Copyright © 2018, Texas Instruments Incorporated
External Memory Interface (EMIF)
Figure 17-2. Timing Waveform of SDRAM PRE Command
17.2.5.2 Interfacing to SDRAM
The EMIF supports a glueless interface to SDRAM devices with the following characteristics:
•
Pre-charge bit is A[10]
•
The number of column address bits is 8, 9, 10, or 11.
•
The number of row address bits is 13, 14, 15, or 16.
•
The number of internal banks is 1, 2, or 4.
shows an interface between the EMIF and a 2M × 16 × 4 bank SDRAM device, and
shows an interface between the EMIF and a 512K × 16 × 2 bank SDRAM device. For devices
supporting 16-bit interface, refer to
for list of commonly-supported SDRAM devices and the
required connections for the address pins.
Figure 17-3. EMIF to 2M × 16 × 4 bank SDRAM Interface