CHAPTER 15 FLASH MEMORY (
µ
PD70F3114)
614
User’s Manual U15195EJ5V0UD
The V850E/IA2 sends back response commands for the commands issued from the dedicated flash programmer.
The following shows the response commands the V850E/IA2 sends out.
Table 15-5. Response Commands
Response Command Name
Function
ACK (acknowledge)
Acknowledges command/data, etc.
NAK (not acknowledge)
Acknowledges illegal command/data, etc.
15.7 Flash Memory Programming by Self-Programming
The
µ
PD70F3114 supports a self-programming function to rewrite the flash memory using a user program. By
using this function, the flash memory can be rewritten with a user application. This self-programming function can be
also used to upgrade the program in the field.
15.7.1 Outline of self-programming
Self-programming implements erasure and writing of the flash memory by calling the self-programming function
(device’s internal processing) on the program placed in the block 0 space (000000H to 1FFFFFH) and areas other
than internal ROM area. To place the program in the block 0 space and internal ROM area, copy the program to
areas other than 000000H to 1FFFFFH (e.g. internal RAM area) and execute the program to call the self-
programming function.
To call the self-programming function, change the operating mode from normal operation mode to self-
programming mode using the flash programming mode control register (FLPMC).
Figure 15-12. Outline of Self-Programming
128 KB
Flash memory
00000H
1FFFFH
Erase area
Note
(64 KB)
Erase area
Note
(64 KB)
Flash memory
Normal operation mode
Self-programming mode
00000H
1FFFFH
FLPMC
←
02H
FLPMC
←
00H
Self-programming
function
(erase/write routine
incorporated)
Note
Data is erased in area units (64 KB).