CHAPTER 15 FLASH MEMORY (
µ
PD70F3114)
616
User’s Manual U15195EJ5V0UD
The self-programming interface is outlined below.
Figure 15-13. Outline of Self-Programming Interface
Application program
Entry program
RAM parameter
Device internal processing
Flash memory
Self-programming
interface
Flash-memory manipulation
15.7.4 Hardware environment
To write or erase the flash memory, a high voltage must be applied to the V
PP
pin. To execute self-programming, a
circuit that can generate a write voltage (V
PP
) and that can be controlled by software is necessary on the application
system. An example of a circuit that can select a voltage to be applied to the V
PP
pin by manipulating a port is shown
below.
Figure 15-14. Example of Self-Programming Circuit Configuration
V
DD
= 3.3 V
±
0.3 V
PD70F3114
V
DD
, AV
DDn
, RV
DD
V
SS3
, V
SS
, CV
SS
, AV
SSn
V
PP
Output port
IC for power supply
OUTPUT
INPUT
ON/OFF
V
SS
10 k
Ω
≥
10 k
Ω
V
IN
µ
V
PP
= 7.8 V
±
0.3 V
REGIN
V
DD
= 5.0 V
±
0.5 V
Remark
n = 0, 1