11.3 Programming
The write, verify, and other sub-modes of the PROM mode are selected as shown in table 11-4.
Table 11-4. Selection of Sub-Modes in PROM Mode
Sub-Mode
CE
OE
V
PP
V
CC
EO
7
to EO
0
EA
14
to EA
0
Write
Low
High
V
PP
V
CC
Data input
Address input
Verify
High
Low
V
PP
V
CC
Data output
Address input
Programming
High
High
V
PP
V
CC
High impedance
Address input
inhibited
Note: The V
PP
and V
CC
pins must be held at the V
PP
and V
CC
voltage levels.
The H8/329 and H8/327 PROM has the same standard read/write specifications as the HN27C256
and HN27256 EPROM.
11.3.1 Writing and Verifying
An efficient, high-speed programming procedure can be used to write and verify PROM data. This
procedure writes data quickly without subjecting the chip to voltage stress and without sacrificing
data reliability. It leaves the data H'FF written in unused addresses. Figure 11-5 shows the basic
high-speed programming flowchart. Tables 11-5 and 11-6 list the electrical characteristics of the
chip in the PROM mode. Figure 11-6 shows a write/verify timing chart.
232
Summary of Contents for H8/326 Series
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