Atmel SAM9X25, Manual

Page: 1098 / 1145

1098
11054A–ATARM–27-Jul-11
SAM9X25
1098
11054A–ATARM–27-Jul-11
SAM9X25
46.7.1 32 kHz Crystal Characteristics
46.7.2 XIN32 Clock Characteristics
Note: 1. These characteristics apply only when the 32.768 KHz Oscillator is in bypass mode (i.e. when RCEN = 0, OSC32EN = 0,
OSCSEL = 1 and OSC32BYP = 1) in the SCKCR register. See “Slow Clock Selection” in the PMC section.
Table 46-12. 32 kHz Crystal Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ESR Equivalent Series Resistor Rs Crystal @ 32.768 kHz 50 100 k
Ω
C
M
Motional Capacitance Crystal @ 32.768 kHz 0.6 3 fF
C
S
Shunt Capacitance Crystal @ 32.768 kHz 0.6 2 pF
I
DD ON
Current dissipation
R
S
= 50 k
Ω (1)
C
CRYSTAL32
= 6 pF 0.55 1.3 μA
R
S
= 50 k
Ω (1)
C
CRYSTAL32
= 12.5pF 0.85 1.6 μA
R
S
= 100 k
Ω (1)
C
CRYSTAL32
= 6 pF 0.7 2.0 μA
R
S
= 100 k
Ω (1)
C
CRYSTAL32
= 12.5 pF 1.1 2.2 μA
I
DD STDBY
Standby consumption 0.3 μA
Table 46-13. XIN32 Clock Characteristics
Symbol Parameter Conditions Min Max Units
1/(t
CPXIN32
) XIN32 Clock Frequency 44 kHz
t
CPXIN32
XIN32 Clock Period 22 μs
t
CHXIN32
XIN32 Clock High Half-period 11 μs
t
CLXIN32
XIN32 Clock Low Half-period 11 μs
t
CLCH32
XIN32 Clock Rise time 400 ns
t
CLCL32
XIN32 Clock Fall time 400 ns
C
IN32
XIN32 Input Capacitance
(1)
6 pF
R
IN32
XIN32 Pulldown Resistor
(1)
4 M
Ω
V
IN32
XIN32 Voltage
(1)
VDDBU VDDBU V
V
INIL32
XIN32 Input Low Level Voltage
(1)
-0.3 0.3 x V
VDDBU
V
V
INIH32
XIN32 Input High Level Voltage
(1)
0.7 x V
VDDBU
V
VDDBU
+ 0.3 V