432
7.2.6
Flash Memory Characteristics
Table 7.21
Flash Memory Characteristics
Conditions: V
CC
= 2.7 V to 3.6 V, AV
CC
= 2.7 V to 3.6 V, V
ref
= 2.7 V to AV
CC
,
V
SS
= AV
SS
= 0 V, T
a
= 0°C to 75°C (program/erase operating temperature range:
regular specifications), T
a
= 0°C to 85°C (program/erase operating temperature
range: wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test
Conditions
Programming time
*
1,
*
2,
*
4
t
P
—
10
200
ms/
128 bytes
Erase time
*
1,
*
3,
*
6
t
E
—
50
1000
ms/
128 bytes
Rewrite times
N
WEC
—
—
100
Times
Programming Wait time after
SWE bit setting
*
1
x
1
—
—
µ
s
Wait time after
PSU bit setting
*
1
y
50
—
—
µ
s
Wait time after
P bit setting
*
1,
*
4
z
z1
—
—
30
µ
s
1
≤
n
≤
6
z2
—
—
200
µ
s
7
≤
n
≤
1000
z3
—
—
10
µ
s
Additional
program-
ming wait
Wait time after
P bit clearing
*
1
α
5
—
—
µ
s
Wait time after
PSU bit clearing
*
1
β
5
—
—
µ
s
Wait time after
PV bit setting
*
1
γ
4
—
—
µ
s
Wait time after
H'FF dummy
write
*
1
ε
2
—
—
µ
s
Wait time after
PV bit clearing
*
1
η
2
—
—
µ
s
Wait time after
SWE bit clearing
*
1
θ
100
—
—
µ
s
Maximum number
of writes
*
1,
*
4
N
—
—
1000
*
5
Times
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