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2 CMOS
2.5
Cgb-Vg HighVoltage: Cgb-Vg characteristics using SCUU (A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the Gate-Substrate capacitance (Cgs), and plots the Cgs-Vg characteristics.
DC bias output is performed from -VgsStart to -VgsStop in -VgsStep steps. The CMU performs spot
measurement of the parallel capacitance (Cp) and conductance (G) at each bias output. SCUU enables the
maximum 100 V DC bias.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
MOSFET, 4 terminals
Connect Gate and Substrate to the SCUU. And connect Drain and Source to the specified SMU.
[Required Modules and Accessories]
One MFCMU module, three SMU modules, and a set of SCUU/GSWU are required.
SCUU connections: Output1: Substrate, Output2: Gate
Connection wire must be connected between the GSWU and the DUT interface High/Low guard lines.
[Device Parameters]
Polarity: Nch (CMU/SMU forces the specified value) or Pch (CMU/SMU forces the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
Gate: CMU connected between Gate and Substrate (CV spot measurement)
VgsStart: DC bias start voltage
VgsStop: DC bias stop voltage
VgsStep: DC bias step voltage
Source: SMU connected to Source terminal (constant voltage output)
[Extended Test Parameters]
IsLimit: Source current compliance
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
Agilent EasyEXPERT Application Library Reference, Edition 8
2-10
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...