Agilent Technologies EasyEXPERT, Manual, Page: 169 / 610

6 Memory
6.13 NandFlash2 WordDisturb(WrittenCell): NAND flash memory cell read-
disturb test (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the read-disturb test of the NAND-type flash memory cell, and plots the accumulated stress time vs
threshold voltage characteristics.
[Device Under Test]
NAND-type flash memory cell
Connect the Control Gate to the ASU Output, and the Drain to a SMU.
Open the Floating Gate, and connect the other terminals to a SMU.
[Required Modules and Accessories]
Agilent 81110A pulse generator (2-output, PGU1 and PGU2) 1 unit
HRSMU/ASU 1 set
ASU connections: Output: Control Gate, SMU: HRSMU, AUX: PGU1
Setting of ASU I/O Path, ASU tab, Configuration window: AUX
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
VgStress: Stress voltage for Gate terminal
Vd: Drain voltage
Vs: Source voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
TotalStressTime: Total accumulated stress time
CheckNoOfTimes: Number of Vth measurement operation
PulsePeriod: Write pulse period
PulseDelay: Write pulse delay
PulseWidth: Write pulse width
Vwrite: Write pulse output level
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
[Extended Test Parameter]
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-29