
11 Reliability
11.10
BTI2: Bias Temperature Instability test, 4 terminals (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the bias temperature instability test, and plots the accumulated stress time vs threshold voltage/drain
current characteristics.
This test is performed as follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
TotalStressTime: Total stress time
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
VgStress: Gate terminal stress voltage
MeasConstId: Measurement by constant current method, Yes or No
MeasGmmax: Measurement by extrapolation method, Yes or No
MeasIds: Drain current measurement, Yes or No
MeasTiming: Timing to measure device parameter
[Test Parameters for IvSweep_ConstId]
Id@Vth: Drain current to decide the Vth, per unit area
VgStart1: Sweep start voltage for Gate terminal
VgStop1: Sweep stop voltage for Gate terminal
VgStep1: Sweep step voltage for Gate terminal
Vd1: Drain terminal voltage, constant value
VthStopRate: Vth_ConstId change rate to stop testing
[Test Parameters for IvSweep_gmmax]
VgStart2: Sweep start voltage for Gate terminal
VgStop2: Sweep stop voltage for Gate terminal
VgStep2: Sweep step voltage for Gate terminal
Vd2: Drain voltage
GmStopRate: Vth_GmMax change rate to stop testing
[Test Parameters for Sampling_Ids]
Vg3: Gate terminal voltage
Agilent EasyEXPERT Application Library Reference, Edition 8
11-28
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...