Agilent Technologies EasyEXPERT, Manual, Page: 19 / 610

1 BJT
1.1 BC Diode Fwd: Base-Collector junction forward characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the Base-Collector junction forward characteristics of BJT. Emitter and Substrate are opened.
[Device Under Test]
Bipolar transistor
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Lb: Base length
Wb: Base width
Temp: Temperature
Imax: Current compliance
[Test Parameters]
IntegTime: Integration time
Collector: SMU connected to Collector terminal, primary sweep voltage output
VcStart: Sweep start voltage for Collector terminal
VcStop: Sweep stop voltage for Collector terminal
VcStep: Sweep step voltage for Collector terminal
Base: SMU connected to Base terminal, constant voltage output
[Extended Test Parameters]
Vb: Base voltage
HoldTime: Hold time
DelayTime: Delay time
BaseMinRng: Minimum range for the base current measurement
CollectorMinRng: Minimum range for the collector current measurement
[Measurement Parameters]
Collector current Icollector
Base current Ibase
[User Function]
IcPerArea=Icollector/Lb/Wb
IbPerArea=Ibase/Lb/Wb
[X-Y Plot]
X axis: Collector voltage Vcollector (LINEAR)
Y1 axis: Collector current Icollector (LOG)
Y2 axis: Collector current Icollector (LINEAR)
Y3 axis: Base current Ibase (LOG)
Y4 axis: Base current Ibase (LINEAR)
Agilent EasyEXPERT Application Library Reference, Edition 8
1-3