
7 MixedSignal
7.1
BJT Varactor CV Mismatch: BJT Varactor capacitance CV characteristics
mismatch (A.01.11)
[Supported Analyzer]
B1500A
[Description]
Measures the BJT varactor capacitance (C-Vce characteristics) of device A, and measures the C-Vce
characteristics of device B. After that, calculates the differences between capacitance values by using the
following formula, and plots the results.
DeltaCp=(CpBList-CpAList)/CpAList*100 for parallel capacitance
DeltaCs=(CsBList-CsAList)/CsAList*100 for series capacitance
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Bipolar junction transistor, 4 terminals, 2 ea.
Connect Base to the CMU Low, Collector to the CMU High, and the other terminals to the GNDU.
[Device Parameters]
Polarity: NPN (CMU forces the specified value) or PNP (CMU forces the negative specified value).
Lb: Base length
Wb: Base width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
FREQ: Measurement frequency
OscLevel: Measurement signal level
Collector: CMU connected between Collector and Base (CV sweep measurement)
VcbStart: DC bias start voltage
VcbStop: DC bias stop voltage
VcbStep: DC bias step voltage
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Parallel capacitance Cp
Conductance G
[User Function]
To specify the device, A or B is added to the actual variable names.
Agilent EasyEXPERT Application Library Reference, Edition 8
7-3
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...