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5 MCSMU_IV
5.3
Id-Vgs MCSMU 2-stage: Id-Vgs characteristics, MCSMU Pulse
(A.05.50_2013.04.10.1)
[Supported Analyzer]
B1500A
[Description]
Measures Drain current vs Gate voltage characteristics. SMU pulses are used for the Drain-Source and gate-
Source voltage output.
Measurement is performed twice with lower compliance for low current region, higer compliance for high
current region, then merge two curves.
[Device Under Test]
Power MOSFET, 3 terminals and Subs terminal
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Temp: Temperature
YAxisgfsMin: Y axis (gfs) minimum value
YAxisgfsMax: Y axis (gfs) maximum value
[Test Parameters]
Memo: Memo
Gate: SMU connected to gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for gate terminal
VgStop: Sweep stop voltage for gate terminal
VgStep: Sweep step voltage for gate terminal
GatePulseWidth: Gate pulse width
GateDelay: Gate pulse delay (Effective only for MCSMU)
GatePulseWidth2: Gate pulse width for lower current measurement
GateDelay2: Gate Pulse delay for lower current measurement (Effective only for MCSMU)
Source: COMMON connected to source terminal, 0 V voltage output
Drain: SMU connected to drain terminal, secondary sweep voltage output
VdStart: Sweep start voltage for drain terminal
VdStop: Sweep stop voltage for drain terminal
VdPoint: Sweep step point for drain terminal
IdLimit: Drain current compliance
DrainPulseWidth: Drain pulse width
IdLimit2: Drain current compliance for lower current measurement
DrainPulseWidth2:Drain pulse width for lower current measurement
EnableSubs: Enable or Disable Subs terminal assignment
Subs: SMU connected to Subs terminal, constant voltage output
Vsubs: Constant voltage for Subs terminal
PulsePeriodMode: Pulse period mode (AUTO or MANUAL)
ManualPulsePeriod: Manual pulse period
MeasurementTime: Measurement time
MeasurementTime2:Measurement time for lower current measurement
Agilent EasyEXPERT Application Library Reference, Edition 8
5-7
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...