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21 GaN FET
[Measurement Parameters]
Time: On state time
V_HCSMU: Voltage measured by HCSMU
I_HCSMU: Current measured by HCSMU
Vds: Voltage measured by HVSMU
I_HVSMU: Current measured by HVSMU
V_SwitchControl: Voltage measured by Switch Control MCSMU
I_SwitchControl: Current measured by Switch Control MCSMU
Vgs: Gate voltage
Ig: Gate current
[User Function]
Id: Drain current (= I I_HVSMU)
Rds: Drain-Source resistance (= Vds / Id)
Ta: Temperature (= Temp)
[X-Y Plot]
X axis: Time
Y1 axis: Rds
Y2 axis: Vds
Y3 axis: Id
Y4 axis: Vgs
[List Display]
Time
Rds
Vds
Id
Vgs
Ig
V_HCSMU
I_HCSMU
I_HVSMU
V_SwitchControl
I_SwitchControl
[Parameter Display Area]
Ta
Agilent EasyEXPERT Application Library Reference, Edition 8
21-8
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...