Agilent Technologies EasyEXPERT, Manual, Page: 235 / 610

7 MixedSignal
7.13 Id-Vd Mismatch: Id-Vd characteristics mismatch (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the drain current vs drain voltage characteristics of two MOSFETs, and plots the differences of them.
[Device Under Test]
MOSFET, 4 terminals, 2 ea.
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
DrainA: SMU connected to the device A Drain terminal, primary sweep voltage output
DrainB: SMU connected to the device B Drain terminal, synchronous sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
Gate: SMU connected to Gate terminal, secondary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
IgLimit: Gate current compliance
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
IsubsLimit: Substrate current compliance
Source: SMU connected to Source terminal, constant voltage output
[Extended Test Parameters]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current meaurement
SubsMinRng: Minimum range for the substrate current meaurement
[Measurement Parameters]
Device A Drain current IdrainA
Device B Drain current IdrainB
Substrate current Isubs
Source current Isource
[User Function]
Drain conductance gds_A=diff(IdrainA,VdrainA)
Drain conductance gds_B=diff(IdrainB,VdrainB)
Drain resistance Rds_A=1/gds_A
Drain resistance Rds_B=1/gds_B
Delta_Ids=(IdrainA-IdrainB)/IdrainA*100
Agilent EasyEXPERT Application Library Reference, Edition 8
7-25