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6 Memory
6.29
NorFlash Vth(WritingTimeDependence): NOR flash memory cell writing
time dependence test (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the writing time dependence test of the NOR-type flash memory cell, and plots the accumulated
writing time (accumulated pulse width) vs threshold voltage characteristics. The test is performed as follows.
1. Applies the write pulse with pulse width specified by the first element of the DrainWidth parameter.
2. Measures the Id-Vg characteristics, and extracts the threshold voltage (Vth).
3. Applies the write pulse with pulse width specified by the next element of the DrainWidth parameter.
4. Measures the Id-Vg characteristics, and extracts the threshold voltage (Vth).
5. Repeats 3 and 4 until that the pulse width becomes StopPulseWidth.
[Device Under Test]
NOR-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 1 set or HRSMU/ASU 2 set)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Pdrain: SPGU channel connected to Drain terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
GateWidthOffset: Gate write pulse width offset
GateVwrite: Gate write pulse output level
GateLeadingTime: Gate pulse leading edge transition time
GateTrailingTime: Gate pulse trailing edge transition time
DrainDelay: Drain write pulse delay
DrainWidth: List of drain write pulse width
StopPulseWidth: Drain write pulse width to stop testing
DrainVwrite: Drain write pulse output level
DrainLeadingTime: Drain pulse leading edge transition time
DrainTrailingTime: Drain pulse trailing edge transition time
Agilent EasyEXPERT Application Library Reference, Edition 8
6-61
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...