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11 Reliability
11.2
BJT EB RevStress 3devices[3]: Emitter-Base junction Reverse bias Stress
test, 3 terminals, 3 devices (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the bipolar transistor Emitter-Base junction reverse bias stress test, and plots the accumulated stress
time vs collector current/base current/current amplification factor characteristics.
This test is performed as follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
Bipolar transistor, 3 terminals, 3 devices
[Required Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
GPIB cable
Connect B2200A/B2201A to B1500A with a measuring cable and GPIB cable.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set the output channel number of B2200A/B2201A connected to each terminal of a device under test properly
in the Tr#Base/Tr#Collector/Tr#Emitter field (# is an integer from 1 to 3) of Test Parameters area.
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value)
Le: Emitter length
We: Emitter width
Temp: Temperature (deg C)
IcMax: Maximum collector current value
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
Tr#Base: SWM Pin Assign setting for Base of devices
Tr#Collector: SWM Pin Assign setting for Collector of devices
Tr#Emitter: SWM Pin Assign setting for Emitter of devices
where, # is an integer from 1 to 3.
[Test Parameters for Sampling_Stress]
TotalStrsTime: Total stress time
Tr#StrsEmitter: SMU connected to Emitter terminal of devices, constant voltage output
StrsBase: SMU connected to Base terminal, constant voltage output
StrsCollector: SMU connected to Collector terminal, constant voltage output
Tr#VeStrs: Stress voltage for Emitter terminal of devices
where, # is an integer from 1 to 3.
[Test Parameters for IvSweep_hfe]
MeasCollector: SMU connected to Collector terminal, constant voltage output
Agilent EasyEXPERT Application Library Reference, Edition 8
11-6
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...