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1 BJT
1.37
Vbe-Le: hfe,Vbe-Le characteristics (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures hfe (current amplification factor)-Vbe (voltage between base and emitter) characteristics of BJT
with different Le (emitter length) and plots hfe and Vbe's dependency on Le.
[Device Under Test]
Bipolar transistor, 4 terminals
[Required Modules and Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
GPIB cable
Connect B2200A/B2201A to B1500A with measurement cables and GPIB cable.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set the output channel number of B2200A/B2201A connected to each terminal of a device under test properly
in the B#/C#/E#/Sb# field (# is an integer from 1 to 12) of Test Parameters area.
The maximum number of devices connected at once depends on the number of matrix modules mounted on
B2200A/B2201A. Maximum three devices can be connected to one module at once.
[Setting of Le#/B#/C#/E#/Sb# field (# is an integer from 1 to 12)]
Set one device for Le#(emitter length)/B#(base)/C#(collector)/E#(emitter)/Sb#(substrate).
Le1<Le2<Le3... must be satisfied. Enter zero for a field with no device.
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value)
Temp: Temperature
IcMax: Collector current compliance
[Test Parameters]
IntegTime: Integration time
BaseSMU: SMU connected to Base terminal, constant voltage output
CollectorSMU: SMU connected to Collector terminal, constant voltage output
SbSMU: SMU connected to Substrate terminal, constant voltage output
EmitterSMU: SMU connected to Emitter terminal, primary sweep voltage output
VeStart: Sweep start voltage for Emitter terminal
VeStop: Sweep stop voltage for Emitter terminal
VeStep: Sweep step voltage for Emitter terminal
Vsubs: Substrate voltage
Ic@hfe: Collector current determining the hfe (Calculates hfe on a particular Ic)
Ie@Vbe: Emitter current determining the Vbe voltage (Calculates Vbe on a particular Ie)
We: Emitter width
Le1 - Le12: Emitter length
B1 - B12: SWM Pin Assign setting for Base of devices
C1 - C12: SWM Pin Assign setting for Collector of devices
E1 - E12: SWM Pin Assign setting for Emitter of devices
Sb1 - Sb12: SWM Pin Assign setting for Subs of devices
[Extended Test Parameters]
Vb: Base voltage
Agilent EasyEXPERT Application Library Reference, Edition 8
1-43
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...