Agilent Technologies EasyEXPERT, Manual, Page: 195 / 610

6 Memory
6.26 NorFlash Retention(ErasedCell): NOR flash memory cell Data retention test
after Erase (A.03.10)
[Supported Analyzer]
B1500A
[Description]
Performs the data retention test for the NOR type flash memory cell after the erase operation, and plots the
accumulated time vs threshold voltage characteristics.
[Device Under Test]
NOR-type flash memory cell
[Required Modules and Accessories]
Agilent B1525A SPGU 1 unit
Selector (16440A/16445A 1 set or HRSMU/ASU 2 sets)
[Device Parameters]
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
Gate: SMU connected to Gate terminal, primary sweep voltage output
Drain: SMU connected to Drain terminal, constant voltage output
Source: SMU connected to Source terminal, constant voltage output
Subs: SMU connected to Substrate terminal, constant voltage output
Pgate: SPGU channel connected to Gate terminal via Selector
Psource: SPGU channel connected to Source terminal via Selector
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Vd: Drain voltage
Id@Vth: Drain current to decide the Vth
IntegTime: Integration time
PulsePeriod: Erase pulse period
GateDelay: Gate erase pulse delay
GateWidth: Gate erase pulse width
GateVerase: Gate erase pulse output level
GateLeadingTime: Gate pulse leading edge transition time
GateTrailingTime: Gate pulse trailing edge transition time
SourceDelay: Source erase pulse delay
SourceWidth: Source erase pulse width
SourceVerase: Source erase pulse output level
SourceLeadingTime: Source pulse leading edge transition time
SourceTrailingTime: Source pulse trailing edge transition time
TotalRetentionTime: Time to continue the test. 10 to 10000 seconds.
MeasTiming: Timing to perform Vth measurement
[Extended Test Parameters]
Vs: Source voltage
Vsubs: Substrate voltage
Agilent EasyEXPERT Application Library Reference, Edition 8
6-55