Agilent Technologies EasyEXPERT, Manual, Page: 462 / 610

16 TFT
16.2 TFT Id-Vg: TFT Id-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the drain current vs gate voltage characteristics of TFT.
[Device Under Test]
Thin Film Transistor, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate terminal, primary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
IgLimit: Gate current compliance
Drain: SMU connected to Drain terminal, secondary sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
Source: SMU connected to Source terminal, constant voltage output
[Extended Test Parameters]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
[Measurement Parameters]
Drain current Idrain
[User Function]
IdrainPerWg: Drain current per unit gate width IdrainPerWg=Idrain/Wg
gm: Transconductance gm=diff(Idrain,Vgate)
gmPerWg: Transconductance per unit gate width gmPerWg=diff(IdrainPerWg,Vgate)
[X-Y Graph]
X axis: Gate voltage Vgate (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)
Y2 axis: Drain current Idrain (LOG)
Y3 axis: Transconductance gm (LINEAR)
[List Display]
Gate voltage Vgate
Drain voltage Vdrain
Drain current Idrain
Transconductance gm
Drain current per unit gate width IdrainPerWg
Transconductance per unit gate width gmPerWg
Agilent EasyEXPERT Application Library Reference, Edition 8
16-4