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11 Reliability
11.8
BTI 3devices[3]: Bias Temperature Instability test, 3 terminals, 3 devices
(A.01.20)
[Supported Analyzer]
B1500A
[Description]
Performs the bias temperature instability test, and plots the accumulated stress time vs threshold voltage/drain
current characteristics. Maximum three devices can be measured by a test execution. This test is performed as
follows.
1. performs initial characterization
2. applies stress voltage
3. performs interim characterization
4. saves measurement data
5. repeats 2 to 4 until TotalStressTime elapses
[Device Under Test]
MOSFET, 3 terminals, 3 devices
[Required Accessories]
Agilent B2200A or B2201A switching matrix 1 unit
GPIB cable
Connect B2200A/B2201A to B1500A with a measuring cable and GPIB cable.
Set information on B1500A SMU channel's connection to the B2200A/B2201A input port properly on the
Switching Matrix tab screen of the Configuration window.
Set the output channel number of B2200A/B2201A connected to each terminal of a device under test properly
in the Tr#Gate/Tr#Drain/Tr#Source field (# is an integer from 1 to 3) of Test Parameters area.
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value)
Lg: Gate length
Wg: Gate width
Temp: Temperature (deg C)
[Test Parameters]
IntegTime: Integration time (SHORT, MEDIUM, LONG)
Tr#Gate: SWM Pin Assign settings for Gate terminal of devices
Tr#Drain: SWM Pin Assign settings for Drain terminal of devices
Tr#Source: SWM Pin Assign settings for Source terminal of devices
where, # is an integer from 1 to 3.
[Test Parameters for Sampling_Stress]
TotalStrsTime: Total stress time
Tr#StrsGate: SMU connected to Gate terminal of devices, constant voltage output
StrsSource: SMU connected to Gate terminal of devices, constant voltage output (drain/subs short)
Tr#VgStrs: Gate terminal stress voltage for the devices
VsStrs: Source terminal stress voltage
where, # is an integer from 1 to 3.
[Test Parameters for IvSweep_ConstId]
MeasGate: SMU connected to the basic characteristics acquisition Gate terminal, primary sweep voltage
output
Agilent EasyEXPERT Application Library Reference, Edition 8
11-22
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...