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1 BJT
1.4
BVcei: Emitter-Collector breakdown voltage (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the collector current vs collector voltage characteristics, and extracts the Emitter-Collector junction
breakdown voltage (BVcei). Substrate is opened.
[Device Under Test]
Bipolar transistor
[Device Parameters]
Polarity: NPN (SMUs force the specified value) or PNP (SMUs force the negative specified value).
Le: Emitter length
We: Emitter width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Ic@BVcei: Collector current to decide the breakdown
Collector: SMU connected to Collector terminal, primary sweep voltage output
VcStart: Sweep start voltage for Collector terminal
VcStop: Sweep stop voltage for Collector terminal
VcStep: Sweep step voltage for Collector terminal
Base: SMU connected to Base terminal, constant current output
Ib: Base current
VbLimit: Base voltage compliance
Emitter: SMU connected to Emitter terminal, constant voltage output
[Extended Test Parameters]
Ve: Emitter voltage
HoldTime: Hold time
DelayTime: Delay time
CollectorMinRng: Minimum range for the collector current measurement
[Measurement Parameters]
Collector current Icollector
Emitter current Iemitter
Base voltage Vbase
For the all terminals, the SMU current compliance is set to Ic@BVcei*1.1.
[User Function]
IcPerArea=Icollector/Le/We
IePerArea=Iemitter/Le/We
[Analysis Function]
BVcei=@L1X (X interrupt of Line1)
[X-Y Plot]
X axis: Collector voltage Vcollector (LINEAR)
Y1 axis: Collector current Icollector (LOG)
Y2 axis: Emitter current Iemitter (LOG)
[Parameters Display Area]
Emitter-Collector junction breakdown voltage BVcei
[Auto Analysis]
Line1: Vertical line through Y1 data at Icollector=Ic@BVcei
Agilent EasyEXPERT Application Library Reference, Edition 8
1-6
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...