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15 Structure
15.1
BVgb ThinOx: MOS capacitor Ig-Vg characteristics (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Extracts the gate current vs gate voltage (Ig-Vg) characteristics of MOS capacitor which has an ultra thin gate
insulator. The primary sweep channel applies the quasi-pulsed voltage to Gate terminal, and measures Gate
current at both pulse base and peak. The measurements are repeated ABS(VgStop-VgStart)/VgStep times to
extract the Ig-Vg characteristics. The pulse base value is the primary sweep start value and can be set by the
VgLow parameter. The pulse peak value is the primary sweep stop value and corresponds to Vg.
[Device Under Test]
MOS capacitor
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Gate: SMU connected to Gate, primary sweep voltage output
VgStart: Pulse peak start value
VgStop: Pulse peak stop value
VgStep: Pulse peak step value
VgLow: Pulse base value, primary sweep start value
IgLimit: Gate current compliance
Subs: SMU connected to Substrate, constant voltage output
Vsubs: Substrate voltage
VgStart, VgStop, VgStep values are used to calculate the primary sweep stop value.
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum range for the gate current measurement
SubsMinRng: Minimum range for the substrate current measurement
[Measurement Parameters]
Gate current Igate
Substrate current Isubs
[User Function]
Gate current per Gate unit area IgatePerArea=Igate/Lg/Wg
Substrate current per Gate unit area IsubsPerArea=Isubs/Lg/Wg
[Calculation After Measurement]
Buffer=getVectorData("Vgate")
V_gate=storeAt(Vgate,I,1,at(Buffer,2,1))
Buffer=getVectorData("Igate")
I_gate=storeAt(Igate,I,1,at(Buffer,2,1))
I_gate@LowVg=storeAt(Igate,I,1,at(Buffer,1,1))
Agilent EasyEXPERT Application Library Reference, Edition 8
15-3
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...