Agilent Technologies EasyEXPERT, Manual, Page: 603 / 610

27 PowerMOSFET, PMIC, SiC
27.9 TDDB Constant V: Constant voltage TDDB (A.04.10)
[Supported Analyzer]
B1505A
[Description]
Performs TDDB (Time Dependent Dielectric Breakdown) test and plots stress time vs leak current
characteristics using I/V-t Sampling measurement.
[Device Under Test]
MOS capacitor etc., 2 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Temp: Temperature
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
TotalStressTime: Total stress time, 10 s to 10000 s
FailureCondition: Stress current to decide the breakdown
PointPerDecade: Number of samples for one decade
Interval: Sampling interval
Port1: SMU connected to Port1 terminal
VStress: Stress voltage
Port2: SMU connected to Port2 terminal
[Extended Test Parameters]
ILimit: Current compliance
HoldTime: Hold time
MinRange: Minimum current measurement range
StoringRuntimeData: Data save during stress output, Yes or No
IStressZero: Minimum value of IStress for Y axis
[Measurement Parameters]
Stress current IStress
[User Function]
Ta: Temperature Ta=Temp
Qbdval: Charge per unit time Qbdval=integ(IStress,Time)
DN: Number of data DN=dim1Size(Index)
[X-Y Plot]
X axis: Stress time Time (LOG)
Y axis: Stress current IStress (LOG)
[List Display]
Stress time Time
Stress current IStress
Stress voltage ConstantV
[Parameter Display]
Temperature Ta
Agilent EasyEXPERT Application Library Reference, Edition 8
27-19