Agilent Technologies EasyEXPERT, Manual, Page: 271 / 610

10 PwrDevice
10.1 BVdss[3] PwrDevice: Breakdown voltage between source and drain
(A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the breakdown voltage between source and drain of a power MOSFET. Forces drain sweep voltage
in the direction of FET on, and monitors breakdown.
[Device Under Test]
Power MOSFET, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Is@BVdss: Source current deemed to be a breakdown
Drain: SMU connected to Drain, primary sweep voltage output
VdStart: Sweep start voltage for Drain
VdStop: Sweep stop voltage for Drain
VdStep: Sweep step voltage for Drain
Gate: SMU connected to Gate, constant voltage output
Vg: Gate voltage
Source: SMU connected to Source, constant voltage output
BaseOffsetV: Base offset voltage
Base offset voltage is added to the specified voltage. For example, the gate start voltage will be
BaseOffsetV.
[Extended Test Parameters]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for drain current measurement
GateMinRng: Minimum range for gate current measurement
IgLimit: Gate current compliance
[Measurement Parameters]
Drain current Idrain
Source current Isource
For the Source terminal, the SMU current compliance is set to Is@BVdss*1.1.
[User Function]
IsourcePerWg=Isource/Wg: Source current per unit gate width
IdrainPerWg=Idrain/Wg: Drain current per unit gate width
[Analysis Function]
Agilent EasyEXPERT Application Library Reference, Edition 8
10-3