Agilent Technologies EasyEXPERT, Manual, Page: 65 / 610

2 CMOS
2.1 BVdss: Breakdown voltage between source and drain (A.01.20)
[Supported Analyzer]
B1500A, 4155B, 4155C, 4156B, 4156C
[Description]
Measures the breakdown voltage between source and drain of MOSFET.
[Device Under Test]
MOSFET, 4 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Is@BVdss: Source current to decide the breakdown
Drain: SMU connected to Drain, primary sweep voltage output
VdStart: Sweep start voltage for Drain
VdStop: Sweep stop voltage for Drain
VdStep: Sweep step voltage for Drain
Gate: SMU connected to Gate, constant voltage output
Subs: SMU connected to Substrate, constant voltage output
Source: SMU connected to Source, constant voltage output
[Extended Test Parameters]
Vg: Gate voltage
Vs: Source voltage
Vsubs: Substrate voltage
HoldTime: Hold time
DelayTime: Delay time
DrainMinRng: Minimum range for the drain current measurement
GateMinRng: Minimum range for the gate current measurement
SubsMinRng: Minimum range for the substrate current measurement
[Measurement Parameters]
Drain current Idrain
Source current Isource
Gate current Igate
Substrate current Isubs
For the source terminal, the SMU current compliance is set to Is@BVdss*1.1.
[User Function]
Source current per unit gate width IsourcePerWg=Isource/Wg
Drain current per unit gate width IdrainPerWg=Idrain/Wg
[Analysis Function]
BVdss=@L1X (X intercept of Line1)
[X-Y Plot]
X axis: Drain voltage Vdrain (LINEAR)
Agilent EasyEXPERT Application Library Reference, Edition 8
2-3