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6 Memory
LeadingTime: Pulse leading edge transition time
TrailingTime: Pulse trailing edge transition time
TotalRetentionTime: Time to continue the test. 10 to 10000 seconds.
[Extended Test Parameters]
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
PgAdd: GPIB address of pulse generator
BaseValue: Write pulse base value
NoOfPulse: Number of output pulses for the write operation
[Test Output: X-Y Graph]
X axis: Time TimeList (LOG)
Y1 axis: Threshold voltage VthList (LINEAR)
[Test Setup Details]
See NandFlash2 IV-Write-IV.
Agilent EasyEXPERT Application Library Reference, Edition 8
6-22
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...