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27 PowerMOSFET, PMIC, SiC
27.1
Cds: Power MOSFET Cds-Vd characteristics (A.05.50)
[Supported Analyzer]
B1505A
[Description]
Measures Drain-Source capacitance (Cds), and plots Cds-Vd characteristics.
For a more accurate measurement, perform correction data measurement at the measurement frequency before
starting the capacitance measurement.
If the measurement frequency is not included in the list of default frequencies below, click the Advanced
Options... button and set the measurement frequency on the Frequency area of the Advanced Options for CMU
Calibration window.
Default frequencies:
1 k, 2 k, 5 k, 10 k, 20 k, 50 k, 100 k, 200 k, 500 k, 1 M, 1.2 M, 1.5 M, 2 M, 2.5 M, 2.7 M, 3 M, 3.2 M, 3.5 M,
3.7 M, 4 M, 4.2 M, 4.5 M, 5 MHz
[Device Under Test]
Power MOSFET, 3 terminals
Connect Drain, Source, and Gate to the High Voltage Bias-T High, Low, and AC Guard respectively.
Or, connect Drain, Source, and Gate to the Test Fixture MFCMU High, MFCMU Low, and AUX circuit
common respectively.
[Required Modules and Accessories]
Agilent B1520A MFCMU 1 unit
Agilent N1260A High Voltage Bias-T or Agilent N1259A Test Fixture with the option N1259A-020
[Device Parameters]
Polarity: Nch (SMU forces the specified value) or Pch (SMU forces the negative specified value).
Temp: Temperature
YAxisCdsMin: Y axis (Cds) minimum value
YAxisCdsMax: Y axis (Cds) maximum value
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
Frequency: Measurement frequency
OscLevel: Measurement signal level
Scale: Scale of DC bias sweep, LINEAR, LOG10, LOG25, or LOG50
Drain: CMU used for the capacitance measurement
VdBias: SMU used for the DC bias sweep source
VdStart: DC bias sweep start voltage
VdStop: DC bias sweep stop voltage
VdLinearStep: DC bias sweep step voltage, effective if Scale=LINEAR
IdLimit: Drain current compliance
[Extended Test Parameters]
HoldTime: Hold time
DelayTime: Delay time
IdMinRange: Minimum range for the drain current measurement
[Measurement Parameters]
Drain-Source capacitance Cds
Drain-Source current Ids
Agilent EasyEXPERT Application Library Reference, Edition 8
27-3
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...