Agilent Technologies EasyEXPERT, Manual, Page: 595 / 610

27 PowerMOSFET, PMIC, SiC
27.5 Id(off)-Vds: Id(off)-Vds characteristics (A.05.00)
[Supported Analyzer]
B1505A
[Description]
Measures and plots Drain current vs Drain voltage characteristics in the cutoff region, and extracts the
breakdown voltage and the cutoff current.
[Device Under Test]
Power MOSFET, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Temp: Temperature
[Test Parameters]
Memo: Memorandum
IntegTime: Integration time
Drain: SMU connected to Drain terminal, primary sweep voltage output
Vd@Idss: Drain voltage to decide the cutoff current Idss
Id@BVdss: Drain current to decide the breakdown voltage BVdss
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
Gate: SMU connected to Gate terminal, constant voltage output
Vg: Gate voltage
Source: GNDU connected to Source terminal
IdLimit: Drain current compliance
[Extended Test Parameters]
IgLimit: Gate current compliance
HoldTime: Hold time
DelayTime: Delay time
IdZero: Y axis (Idrain) minimum value
IdMinRange: Minimum range for the drain current measurement
IgMinRange: Minimum range for the gate current measurement
[Measurement Parameters]
Drain current Idrain
Gate current Igate
[User Function]
Ta: Temperature Ta=Temp
[Analysis Function]
BVdss=@MX (X coordinate of Marker)
Idss=@L1Y (Y intercept of Line1)
[Auto Analysis]
Marker: Idrain=Id@BVdss
Line1: Vdrain=Vd@Idss
[X-Y Plot]
Agilent EasyEXPERT Application Library Reference, Edition 8
27-11