Agilent Technologies EasyEXPERT, Manual, Page: 476 / 610

17 Utility
17.12 CV Curve Parameter Calculator: Calculates CMOS transistor parameters
from capacitance versus voltage sweeps. (A.01.02)
[Supported Analyzer]
B1500A, B1505A, 4155B, 4155C, 4156B, 4156C
[Description]
Device parameters (Nsub, Cfb, Vfb, etc.) for an NMOS or PMOS transistor are calculated from the inputted
CV curve using standard equations.
[Device Measured]
No measurement performed; this application test does analysis only. This application test is designed to be
used inside of another application test. Within the umbrella application test you can make the CV measurement
using either a classic test C-V Sweep or another application test. In fact, you do not need to use the B1500A
MFCMU to make the CV measurement; you can also generate the CV curve with the SMUs using the QSCV
function or with an external C-meter (such as a 4284A, E4980A or 4294A) that is being controlled by an
application test.
[Device Parameters]
Area: Area of the transistor gate (cm^2)
TempC: Ambient temperature (degrees Celsius)
Pm: Work function of the gate material (Volts)
Device: Device type (NMOS=-1, PMOS=1)
[Test Parameters]
Vsweep: Vector containing a minimum of 3 and a maximum of 1001 points representing the voltage applied
to the transistor gate
Cmeas: Vector containing a minimum of 3 and a maximum of 1001 points representing the measured gate-to-
substrate capacitance
[Extended Test Parameters}:
Autoscale: Variable to control auto scaling of the display (0=Off, 1=On)
[Measurement Parameters]
None
[User Function]
None
[X-Y Plot]
X axis: Applied gate voltage (LINEAR)
Y1 axis: Measured gate-to-substrate capacitance (LINEAR)
[List Display]
Vsweep: Applied gate voltage (Volts)
Cmeas: Measured gate-to-substrate capacitance (Farads)
[Parameter Display]
Cox (Farads)
Cmin (Farads)
tox (Angstroms)
ni (1/cm^3)
Nsub (1/cm^3)
Agilent EasyEXPERT Application Library Reference, Edition 8
17-14