Agilent Technologies EasyEXPERT, Manual, Page: 275 / 610

10 PwrDevice
10.3 Id-Vd pulse[3] PwrDevice: Id-Vd characteristics (3-terminal), SMU Pulse
(A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the drain current vs drain voltage characteristics of a power MOSFET.
[Device Under Test]
Power MOSFET, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
IdMax: Drain current compliance
[Test Parameters]
IntegTime: Integration time
Drain: SMU connected to Drain terminal, primary sweep voltage output
VdStart: Sweep start voltage for Drain terminal
VdStop: Sweep stop voltage for Drain terminal
VdStep: Sweep step voltage for Drain terminal
PulsePeriod: Pulse period
PulseWidth: Pulse width
Gate: SMU connected to Gate terminal, secondary sweep voltage output
VgStart: Sweep start voltage for Gate terminal
VgStop: Sweep stop voltage for Gate terminal
VgStep: Sweep step voltage for Gate terminal
Source: SMU connected to Source terminal, constant voltage output
BaseOffsetV: Base offset voltage
Base offset voltage is added to the specified voltage. For example, the gate start voltage will be
BaseOffsetV.
[Extended Test Parameters]
Vs: Source voltage
IgLimit: Gate current compliance
BaseValue: Pulse base voltage
HoldTime: Hold time
DelayTime: Delay time
[Measurement Parameters]
Drain current Idrain
[User Function]
IdrainPerWg=Idrain/Wg: Drain current per unit gate width
[X-Y Plot]
X axis: Drain voltage Vdrain (LINEAR)
Y1 axis: Drain current Idrain (LINEAR)[List Display]
Drain voltage Vdrain
Drain current Idrain
Source voltage Vsource
Gate voltage Vgate
Drain current per unit gate width IdrainPerWg
Agilent EasyEXPERT Application Library Reference, Edition 8
10-7