Agilent Technologies EasyEXPERT, Manual, Page: 273 / 610

10 PwrDevice
10.2 BVgso[3] PwrDevice: Breakdown voltage between gate and source (A.01.20)
[Supported Analyzer]
B1500A
[Description]
Measures the breakdown voltage between gate and source of a power MOSFET when drain is opened. Forces
gate sweep voltage in the direction of FET off, and monitors breakdown.
[Device Under Test]
Power MOSFET, 3 terminals
[Device Parameters]
Polarity: Nch (SMUs force the specified value) or Pch (SMUs force the negative specified value).
Lg: Gate length
Wg: Gate width
Temp: Temperature
[Test Parameters]
IntegTime: Integration time
Is@BVgso: Source current deemed to be a breakdown
Gate: SMU connected to Gate, primary sweep voltage output
VgStart: Sweep start voltage for Gate
VgStop: Sweep stop voltage for Gate
VgStep: Sweep step voltage for Gate
Source: SMU connected to Source, constant voltage output
BaseOffsetV: Base offset voltage
Base offset voltage is added to the specified voltage. For example, the gate start voltage will be
BaseOffsetV.
[Extended Test Parameters]
Vs: Source voltage
HoldTime: Hold time
DelayTime: Delay time
GateMinRng: Minimum range for gate current measurement
SourceMinRng: Minimum range for source current measurement
[Measurement Parameters]
Source current Isource
Gate current Igate
For the terminals, the SMU current compliance is set to Is@BVgso*1.1.
[User Function]
IgatePerGateArea=Igate/Lg/Wg: Gate current per unit gate area
[Analysis Function]
BVgso=@L1X (X intercept of Line1)
[Auto Analysis]
Line1: Vertical line for Y1 at Isource=Is@BVgso
[X-Y Plot]
Agilent EasyEXPERT Application Library Reference, Edition 8
10-5