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11 Reliability
11.40
Timing On-the-fly NBTI-Mch (A.05.03.2013.0124_2007.02.28.1)
NBTI: Negative Bias Temperature Instability Test
[Supported Analyzer]
B1500A
[Description]
This test examines the MOSFET Negative Bias Temperature Instability of Multi-drain device. The output is a plot
of the drain current versus cumulative stress time. The time sampling characteristics of drain current is plotted
between the stress cycles.
Test is performed as follows.
Step1. Measures multiple drain currents (measures using “Sampling_Ids” classic test and the results are stored in
“IdxsList”. x=1~4)
Step2. The stress is applied based on the Stress_Time_List parameter table.
The stress time can be adjusted with roughly a few 100ms accuracy by properly adjusting the "Stress_T_adj"
parameter.
Step3. Measurements of the Id in the step 1 is repeated.
Step4. Perform measurements by repeating step2 and step3 till the cumulative stress time exceeds the
"TotalStressTime".
TotalStressTime can be set from 10 sec to 10,000 sec.
[Limitation]
- EasyEXPERT version A.02.10 or later is required to execute this application test definition.
- The minimum sampling interval is 100us + (20us x #of additional Drain SMUs) if used more than one SMU is used
for Id measurements.
[Reference]
Multi-Channel Parallel Timing-on-the-fly NBTI Characterization Using Agilent B1500A
http://cp.literature.agilent.com/litweb/pdf/5989-6526EN.pdf
[Device Under test]
- MOSFET, 4 terminals or Commonn gate, common Source and common subs with independent 4 Drain device.
- The drain measurements acn be selected from one of (1) for single Dr SMU ch. or (2) simultaneou 4 ch. drain
NBTI measurements.
(
Specify with "N0_of_Drain_Ch" parameter
)
[Device Parameters]
Polarity: Nch or Pch
Temp: Temperature
[Test Parameters]
Sampling measurements: Perform Id sampling measurements after applying negative bias stress.
Sampling Time Parameters: Set sampling time parameters for Id characterization.
- SamplingInterval: Set sampling time interval for Id characterizes.
- SamplingNumber: Set sampling number for sampling measurements.
- NegativeHoldTime: Set sampling time under the negative bias stress before starting the id sampling
characterization.
- Id sampling characterization is made using the following parameters:
o Vg, Vd, Vsubs, Vs
Negative Bias Stress: Apply a specified stress for NBTI degradation test.
- TotalStressTime: Specify the maximum negative bias stress time
- The following parameters are applied in the stress condition.
o VgStress, VdStress, VsubStress, VsStress
Agilent EasyEXPERT Application Library Reference, Edition 8
11-89
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...