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21 GaN FET
21.4
FET Current Collapse Signal Monitor: GaN FET Current Collapse
characteristics (using N1267A) (A.05.03)
[Supported Analyzer]
B1505A
[Description]
Measures Current Collapse of GaN FET.
On state current, voltage and resistance after off state are measured by pulse and signal monitor using N1267A.
[Device Under Test]
GaN FET, 4 terminals
[Device Parameters]
Temp: Temperature
RdsAxisMin: Y axis (Rds) minimum value
RdsAxisMax: Y axis (Rds) maximum value
VdsAxisMin: Y axis (Vds) minimum value
VdsAxisMax: Y axis (Vds) maximum value
IdAxisMin: Y axis (Id) minimum value
IdAxisMax: Y axis (Id) maximum value
[Test Parameters]
Memo: Memorandum
GNDU: GNDU connected to N1267A GNDU input
HVSMU: HVSMU connected to N1267A HVSMU input
HCSMU: HCSMU connected to N1267A HCSMU input
SwitchControl: MCSMU connected to N1267A Switch Control
Gate: MCSMU/HCSMU connected to Gate terminal
Substrate: SMU/GNDU connected to Substrate
VgOff: Gate off voltage
VgOn: Gate on voltage
VdOff: Drain voltage applied while off state
VdOn: Drain voltage applied while on state (Voltage drops inside of N1267A according to on state current)
IdOnLimit: Drain current compliance for on state
OffStressTime: Duration of VdOff application
OnTime: Duration of VdOn application
[Extended Test Parameters]
MonitorStartTime: Time offset from turning DUT on to starting signal monitor
MonitorDuration: Duration of signal monitor
IgLimit: Gate current compliance
IdOffLimit: Drain current compliance for off state
(
AUTO: 8mA for VdOff up to 1500V, 4mA for VdOff
above 3kV
)
DischargingSwitchControl: Option for discharging by N1267A internal switch (for the case of on state current
less than IdOffLimit)
DischargingWaitTime: Wait time for outputting gate on voltage after starting discharging by N1267A internal
switch (effective in case of DischargingSwitchControl On)
VOnHoldTime: Hold time of VOn output by HCSMU before turning DUT on
TimeAxisScale: Option for scale of X axis (Time)
VerboseDataStore: Option for saving data of the embedded classic test setup
[Measurement Parameters]
Agilent EasyEXPERT Application Library Reference, Edition 8
21-9
Summary of Contents for EasyEXPERT
Page 1: ...Agilent Technologies Agilent EasyEXPERT Application Library Reference ...
Page 17: ...1 BJT ...
Page 63: ...2 CMOS ...
Page 119: ...3 Discrete ...
Page 127: ...4 GenericTest ...
Page 133: ...5 MCSMU_IV ...
Page 141: ...6 Memory ...
Page 211: ...7 MixedSignal ...
Page 249: ...8 NanoTech ...
Page 265: ...9 Organic ...
Page 269: ...10 PwrDevice ...
Page 285: ...11 Reliability ...
Page 377: ...12 Sample ...
Page 381: ...13 Solar Cell ...
Page 401: ...14 SPGU_PLSDIV ...
Page 409: ...15 Structure ...
Page 459: ...16 TFT ...
Page 463: ...17 Utility ...
Page 478: ...17 Utility Agilent EasyEXPERT Application Library Reference Edition 8 17 16 ...
Page 479: ...18 WGFMU ...
Page 493: ...19 WGFMU_IV ...
Page 505: ...20 GaN Diode ...
Page 511: ...21 GaN FET ...
Page 523: ...22 IGBT ...
Page 549: ...23 Interconnection ...
Page 553: ...24 MISCAP ...
Page 561: ...25 PowerBJT ...
Page 576: ...25 PowerBJT Agilent EasyEXPERT Application Library Reference Edition 8 25 16 ...
Page 577: ...26 PowerDiode ...
Page 585: ...27 PowerMOSFET PMIC SiC ...