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R01UH0336EJ0102 Rev.1.02
Page 1500 of 1538
Jul 17, 2014
V850E2/PG4-L
Section 27 Electrical Characteristics
DC Characteristics (3/3)
(T
a
= -40 to +125°C, V
DD
= EV
DD
= OSCV
DD
= 3.0 to 5.5 V,
AV
DD0
= 4.2 to 5.5 V , V
SS
= EV
SS
= OSCV
SS
= AV
SS0
= 0 V)
Note 1.
I
DDE
is the current flowing through EV
DD
/OSCV
DD.
However, it does not
include the current flowing through the pull-up/pull-down resistors, nor the port
toggle current. For details on the current flowing through AV
DD0
, refer to
section 27.6.15, A/D Converter Characteristics.
Note 2.
The current in the transient state at power on is not included. It indicates the
reset current when the internal power supply is stable.
Caution
Make sure that the total current flowing through these pins and output currents
does not exceed 50 mA.
Item
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Power-supply
current*
1
Normal
operating
conditions
I
DD
Internal power
supply current
(V
DD
)
fxx =
48 MHz
PCLK =
1/1HEAPCLK
55
115
mA
PCLK =
1/2HEAPCLK
47
100
mA
fxx =
64 MHz
PCLK =
1/1HEAPCLK
72
150
mA
PCLK =
1/2HEAPCLK
63
130
mA
fxx =
80 MHz
PCLK =
1/1HEAPCLK
90
185
mA
PCLK =
1/2HEAPCLK
79
160
mA
I
DDE
External power
supply current
(EV
DD
+
OSCV
DD
)
15
mA
When rewriting
flash memory
I
DDF
Internal power
supply current
(V
DD
)
95
mA
I
DDE
External power
supply current
(EV
DD
+
OSCV
DD
)
86
mA
When
executing BIST
I
DDB
Internal power
supply current
(V
DD
)
fxx = 48 MHz
56
110
mA
fxx = 64 MHz
75
145
mA
fxx = 80 MHz
94
180
mA
I
DDE
External power
supply current
(EV
DD
+
OSCV
DD
)
15
mA
At reset
*
2
I
DDR
Internal power
supply current
(V
DD
)
30
mA
I
DDE
External power
supply current
(EV
DD
+
OSCV
DD
)
15
mA
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