GR740-UM-DS, Nov 2017, Version 1.7
295
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GR740
19.9.2 Memory configuration register 3 (MCFG3)
MCFG3 contains fields to control and monitor memory EDAC.
19.9.3 Memory configuration register 5 (MCFG5)
MCFG5 contains fields to control lead out cycles for the ROM and IO areas.
Table 366.
Memory configuration register 3
31
28
27
26
RESERVED
ME
RESERVED
r
12
11
10
9
8
7
0
WB
RB
R
PE
TCB
0
0
(btstr)
N/R
rw
rw
rw
rw
31 : 28
RESERVED
27
Memory EDAC (ME) - Indicates if memory EDAC is present. (read-only)
26 : 12
RESERVED
11
EDAC diagnostic write bypass (WB) - RESERVED in this device, always write to 0.
10
EDAC diagnostic read bypass (RB) - RESERVED in this device, always write to 0.
9
RESERVED
8
PROM EDAC enable (PE) - Enable EDAC checking of the PROM area. At reset, this bit is initial-
ized with the value of GPIO line 14 (see section 3.1)
7 : 0
Test checkbits (TCB) - RESERVED in this device. Always write to 0.
Table 367.
Memory configuration register 5
31
30
29
23
22
16
RESERVED
IOHWS
RESERVED
0x00
rw
15
14
13
7
6
0
RESERVED
ROMHWS
RESERVED
0x00
rw
31 : 30
RESERVED
29:23
IO lead out (IOHWS) - Lead out cycles added to IO accesses are IOHWS(3:0)*2
IOHWS(6:4)
22 : 14
RESERVED
13:7
ROM lead out (ROMHWS) - Lead out cycles added to ROM accesses are
ROMHWS(3:0)*2
ROMHWS(6:4)
6 : 0
RESERVED