Chapter 4 Characteristics Measurement
4-24
Curve Tracer CS-3000 Series Instruction Manual
4.1.3.1
I
D
vs. V
DS
measurement
It explains the measurement procedure for I
D
vs. V
DS
characteristics of FET.
The diagram on the right in this frame
shows the measurement result of I
D
vs.
V
DS
characteristics of a FET based on the
extracts from the FET performance table
below.
In addition, extracts from the performance
table of device characteristics which
should be investigated in advance and the
connection diagram indicating how to
connect a measured device to the
attached test adapter are shown.
I
D
vs.V
DS
characteristics of source-grounded FET
Extracts from FET performance table
Absolute max. rating
Voltage between gate/drain V
GDS
−
50 V
Gate current I
G
10 mA
Permissible loss P
D
150 mW
Electric characteristics
Item
Measurement
Measurement
conditions
value/min.
Drain
V
DS
=
−
10 V
0.3
−
6.5mA
current I
DS
V
GS
=
0 V
Caution!
When starting or finishing measurement, operate CS-3000 as shown below:
When starting measurement, set HIGH VOLTAGE breaker to DISABLED and open the test fixture.
After connecting a measured device, set HIGH VOLTAGE breaker to ENABLED.
After finishing measurement, rotate VARIABLE counterclockwise to set the value to 0% (to discharge
applied voltage).
Set HIGH VOLTAGE breaker to DISABLED.
Connection diagram
Connect the drain/gate/source terminals of a FET to
the collector/base/emitter terminals of the test adapter.
For connection between the test fixture and CS-3000,
see Section 3.3.2.
Test adapter
Patch panel
Drain
(collector)
Source
(emitter)
Gate
(base)
Summary of Contents for CS-3000 Series
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