Chapter 4 Characteristics Measurement
Curve Tracer CS-3000 Series Instruction Manual
4-31
Extracts from FET performance table
Absolute max. rating
Voltage between gate/drain V
GDS
−
50 V
Gate current I
G
10 mA
Permissible loss P
D
150 mW
Electric characteristics
Item
Measurement
Measurement
conditions
value
Drain
V
DS
=−
10 V
0.3 to 6.5mA
current I
DS
V
GS
=0 V
Forward
V
DS
=10 V
1.2 mS
transfer
Admittance
V
GS
=0 V
Caution!
When starting or finishing measurement, operate CS-3000 as shown below:
When starting measurement, set HIGH VOLTAGE breaker to DISABLED and open the test fixture.
After connecting a measured device, set HIGH VOLTAGE breaker to ENABLED.
After finishing measurement, rotate VARIABLE counterclockwise to set the value to 0% (to discharge
applied voltage).
Set HIGH VOLTAGE breaker to DISABLED.
4.1.3.3
I
D
vs. V
GS
characteristics and forward transfer admittance
It shows examples of SWEEP measurement which obtains the forward transfer admittance of
N-channel FET under the same conditions as "Section 4.1.3.1 I
D
vs. V
DS
characteristics."
The diagram on the right in this frame
shows the measurement result of the
forward transfer admittance of a FET
which is SWEEP-measured based on the
extracts from the FET performance table
below.
For details of SWEEP measurement, see
Section 3.8.
In addition, extracts from the performance
table of device characteristics which
should be investigated in advance and the
connection diagram indicating how to
connect a measured device to the
attached test adapter are shown.
Forward transfer admittance of FET: +2.871mS
Connection diagram
Connect the drain/gate/source terminals of a FET to
the collector/base/emitter terminals of the test
adapter. For connection between the test fixture and
CS-3000, see Section 3.3.2.
Test adapter
Patch panel
Drain
(collector)
Source
(emitter)
(Base)
Gate
Summary of Contents for CS-3000 Series
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