Iwatsu CS-3000 Series, Instruction Manual

Page: 191 / 234

Chapter 4 Characteristics Measurement
Curve Tracer CS-3000 Series Instruction Manual 4-21
4.1.2.5
I
B
vs.V
CE
characteristics
It explains the measurement procedure of I
B
vs.V
CE
characteristics under the same conditions
as "Section 4.1.2.1 I
C
vs. V
CE
characteristics," based on the extracts from the performance table
for PNP transistors.
The diagram on the right in this frame
shows the measurement result of I
B
vs. V
CE
characteristics of a transistor based on the
extracts from the transistor performance
table below.
In addition, extracts from the performance
table of device characteristics which should
be investigated in advance and the
connection diagram indicating how to
connect a measured device to the attached
test adapter are shown.
I
B
vs.V
CE
characteristics of transistor
Caution! When starting or finishing measurement, operate CS-3000 as shown below:

When starting measurement, set HIGH VOLTAGE breaker to DISABLED and open the test fixture.

After connecting a measured device, set HIGH VOLTAGE breaker to ENABLED.

After finishing measurement, rotate VARIABLE counterclockwise to set the value to 0% (to discharge
applied voltage).

Set HIGH VOLTAGE breaker to DISABLED.
Connection diagram
Connect the collector/base/emitter terminals of a
transistor to the collector/base/emitter terminals of the
test adapter. For connection between the test fixture
and CS-3000, see Section 3.3.2.
Extracts from transistor performance table
Absolute max. rating
Voltage between collector/base V
CBO
− 50 V
Voltage between collector/emitter V
CEO
− 50 V
Voltage between emitter/base V
EBO
− 5 V
Collector current I
C
− 150 mA
Base current I
B
− 50 mA
Collector loss P
C
400 mW
Electric characteristics
Item
Measurement Measurement
conditions value/standard
DC current V
CE
=-6 V 70 to 400
amplification I
C
=-100 mA
factor
Test adapter
Patch panel
Collector
Emitter
Base