DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
FT DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
FT DRAFT DRAFT DRAFT DRA
UM10316_0
© NXP B.V. 2008. All rights reserved.
User manual
Rev. 00.06 — 17 December 2008
488 of 571
NXP Semiconductors
UM10316
Chapter 28: LPC29xx Flash/EEPROM
3.1 Flash memory control register
The flash memory control register (FCTR) is used to select read modes and to control the
programming of flash memory.
Flash memory has data latches to store the data that is to be programmed into it, so that
the data-latch contents can be read instead of reading the flash memory contents.
Data-latch reading is always done without buffering, with the programmed number of
wait-states (WSTs) on every beat of the burst. Data-latch reading can be done both
synchronously and asynchronously, and is selected with the FS_RLD bit.
Index-sector reading is always done without buffering, with the programmed number of
WSTs on every beat of the burst. Index-sector reading can be done both synchronously
and asynchronously and is selected with the FS_ISS bit.
shows the bit assignment of the FCTR register.
098h
R/W
0x0
EEPWRDWN <tbd>
EEPROM
power-down/start DCM
register
09Ch
R/W
0x0
EEMSSTART
EEPROM BIST start
address register
0A0h
R/W
0x0
EEMSSTOP
EEPROM BIST stop
address register
0A4h
R
0x0
EEMSSIG
EEPROM 24-bit BIST
signature register
Registers shared by flash and EEPROM
FD8h
R/W
-
INT_CLR_ENABLE
Flash interrupt clear-
enable register
see
FDCh
R/W
-
INT_SET_ENABLE
Flash interrupt set-
enable register
see
FE0h
R/W
0h
INT_STATUS
Flash interrupt status
register
see
FE4h
R/W
0h
INT_ENABLE
Flash interrupt enable
register
see
FE8h
R/W
-
INT_CLR_STATUS
Flash interrupt
clear-status register
see
FECh
R
-
INT_SET_STATUS
Flash interrupt set-status
register
see
Table 414. Flash Memory Controller register overview
…continued
(base address 0x2020 0000)
Address
offset
Access
Reset
Value
Name
Description
Reference