DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
FT DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
FT DRAFT DRAFT DRAFT DRA
UM10316_0
© NXP B.V. 2008. All rights reserved.
User manual
Rev. 00.06 — 17 December 2008
489 of 571
NXP Semiconductors
UM10316
Chapter 28: LPC29xx Flash/EEPROM
Table 415. FCTR register bit description (FTCR, address: 0x2020 0000)
* = reset value
Bit
Symbol
Access
Value
Description
31 to 16 reserved
R
-
Reserved; do not modify. Read as logic 0
15
FS_LOADREQ
R/W
Data load request.
1
The flash memory is written if FS_WRE has
been set; the data load is automatically
triggered after the last word was written to the
load register.
0*
Automatically cleared; always read as logic 0.
14
FS_CACHECLR
R/W
Buffer-line clear.
1
All bits of the data-transfer register are set.
0*
Reset value.
13
FS_CACHEBYP
R/W
Buffering bypass.
1
Reading from flash memory is without buffering.
0*
Read-buffering is active.
12
FS_PROGREQ
R/W
Programming request.
1
Flash memory programming is requested.
0*
Reset value.
11
FS_RLS
R/W
Select sector latches for reading.
1
The sector latches are read.
0*
The flash memory array is read.
10
FS_PDL
R/W
Preset data latches.
1
All bits in the data latches are set.
0*
Reset value.
9
FS_PD
R/W
Power-down.
1
The flash memory is in power-down.
0*
Reset value.
8
reserved
R
-
Reserved; do not modify. Read as logic 0
7
FS_WPB
R/W
Program and erase protection.
1
Program and erase enabled.
0*
Program and erase disabled.
6
FS_ISS
R/W
Index-sector selection.
1
The index sector will be read.
0*
The flash memory array will be read.
5
FS_RLD
R/W
Read data latches.
1
The data latches are read for verification of data
that is loaded to be programmed.
0*
The flash memory array is read.
4
FS_DCR
R/W
DC-read mode.
1
Asynchronous reading selected.
0*
Synchronous reading selected.
3
reserved
R
-
Reserved; do not modify. Read as logic 0