DR
AFT
DR
AFT
DRAFT
DR
D
RAFT
DRAFT
DRA
FT DRAF
D
RAFT DRAFT DRAFT DRAFT DRAFT D
DRAFT
D
RAFT DRA
FT DRAFT DRAFT DRAFT DRA
UM10316_0
© NXP B.V. 2008. All rights reserved.
User manual
Rev. 00.06 — 17 December 2008
494 of 571
NXP Semiconductors
UM10316
Chapter 28: LPC29xx Flash/EEPROM
3.6 Flash-memory BIST control registers
The flash-memory Built-In Self Test (BIST) control registers control the embedded BIST
signature generation. This is implemented via the BIST start-address register FMSSTART
and the stop-address register FMSSTOP.
A signature can be generated for any part of the flash memory contents. The address
range to be used for generation is defined by writing the start address to the BIST start-
address register and the stop address to the BIST stop-address register. The BIST start
and stop addresses must be flash memory word-aligned and can be derived from the AHB
byte addresses through division by 16. Signature generation is started by setting the BIST
start-bit in the BIST stop-address register. Setting the BIST start-bit is typically combined
with defining the signature stop address.
Flash access is blocked during the BIST signature calculation. The duration of the flash
BIST time is
show the bit assignment of the FMSSTART and
FMSSTOP registers respectively.
Table 420. FMSSTART register bit description (FMSSTART, address: 0x2020 0020)
* = reset value
Bit
Symbol
Access
Value
Description
31 to 17 reserved
R
-
Reserved; do not modify. Read as logic 0,
write as logic 0.
16 to 0
FMSSTART[16:0]
R/W
0 0000h*
BIST start address (corresponds to AHB byte
address [20:4]).
t
BIST
t
fl BIST
(
)
3
+
t
clk sys
(
)
×
(
)
FMSSTOP
FMSSTART
–
1
+
(
)
×
=