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UM10316_0
© NXP B.V. 2008. All rights reserved.
User manual
Rev. 00.06 — 17 December 2008
476 of 571
NXP Semiconductors
UM10316
Chapter 28: LPC29xx Flash/EEPROM
In the following sections access to the Flash Memory Controller via software is described.
Access via the JTAG interface is described in
.
2.1 Flash memory layout
The flash memory is arranged into sectors, pages and flash-words
. For
writing (erase/burn) the following issues are relevant:
•
Erasing is done per sector.
•
Protection against erase/burn is arranged per sector.
•
Burning - the actual write into flash memory - is done per page.
•
The smallest part that can be written at once is a flash-word (16 bytes).
lists the various parameters of the flash memory.
2.2 Flash memory reading
During a read (e.g. read-only data or program execution) no special actions are required.
The address space of flash memory can simply be accessed like normal ROM with word,
half-word or byte access. It is possible however to modify or optimize the read settings of
the flash memory.
Fig 119. Flash memory layout
Table 410. Flash memory layout
Type number
Flash size Sector
Page
(per sector)
Flash-word
(per page)
#
small
large
Size
small large
#
small
large
Size
#
Size
LPC2919/01,
LPC2929,
LPC2939
768k
8/11
8192/65536
16/128
512 bytes
32
16 byte
LPC2917/01,
LPC2925,
LPC2927
512k
8/7
8192/65536
16/128
512 byte
32
16 byte
LPC2923
256 kB
8/3
8192/65536
16/128
512 byte
32
16 byte
LPC2921
128 kB
4/1
8192/65536
16/128
512 byte
32
16 byte
Base Address of
Flash Memory
Sector 0
Sector 2
Sector 1
Sector s
Page 1
Page 0
Page p
FlashWord 0
FlashWord 1
FlashWord
Byte 0
Byte 1
Byte 15