LAPIS Semiconductor ML610421, User Manual, Page: 383 / 437

ML610Q421/ML610Q422/ML610421 User’s Manual
Chapter 29 On-Chip Debug Function
29 – 2
29.3 Flash Memory Rewrite Function
Flash memory erase/write can be performed with the the memory mounted on board by using the commands from the
on-chip debug emulator (uEASE). For more details on the on-chip debug emulator, see “uEASE User’s Manual”.
Table 29-2 shows the Flash memory rewrite functions.
Table 29-2 Flash Memory Rewrite Functions
Function Outline
Chip erase Erase of 16 Kwords (overall area)
Block erase Erase of 8 Kwords (16 Kbytes)
1-word write Write of 1 word (2 bytes)
Random read Read of input address
Table 29-3 shows the conditions and specifications of Flash memory rewrite.
Table 29-3 Specifications of Flash Memory Rewrite
Parameter Specifications
Rewrite count 80
Operating temperature 0
°
C to 40
°
C
Operating voltage
V
PP
8 V (Typ.) (Supplied from uEASE)
V
DD
3.0V to 3.6 V
V
DDL
2.7 V (Typ.) (Supplied from uEASE)
Chip-erase time 77 ms (Typ.), 100 ms (Max.)
Block-erase time 77 ms (Typ.), 100 ms (Max.)
1-word (16 bits) write 41
µ
s (Typ.), 64
µ
s (Max.)
Overall-word (16K
×
16 bits) write Approx. 0.68s (Typ.), Approx. 1.05s (Max.)
Note:
When performing Flash memory rewrite (erase, write), a voltage within the range from 3.0V to 3.6 V needs to be
applied to the power supply voltage V
DD
.